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BC856AWT1(2001) Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
BC856AWT1
(Rev.:2001)
ONSEMI
ON Semiconductor ONSEMI
BC856AWT1 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CEO –65
V
–45
–30
Collector–Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
BC856 Series
BC857B Only
BC858 Series
V(BR)CES –80
V
–50
–30
Collector–Base Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)CBO –80
V
–50
–30
Emitter–Base Breakdown Voltage
(IE = –1.0 mA)
BC856 Series
BC857 Series
BC858 Series
V(BR)EBO –5.0
V
–5.0
–5.0
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current (VCB = –30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µA, VCE = –5.0 V)
BC856A, BC585A
BC856B, BC857B, BC858B
BC857C
ICBO
–15
nA
–4.0
µA
hFE
90
150
270
(IC = –2.0 mA, VCE = –5.0 V) BC856A, BC858A
BC856B, BC857B, BC858B
BC857C
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
Base–Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)
125
180
250
220
290
475
420
520
800
VCE(sat)
V
–0.3
–0.65
VBE(sat)
V
–0.7
–0.9
VBE(on)
–0.6
V
–0.75
–0.82
fT
100
MHz
Cob
4.5
pF
NF
10
dB
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