BC856AWT1(2001) Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

BC856AWT1
(Rev.:2001)

General Purpose Transistors

ON Semiconductor 

BC856AWT1 Series,

BC857BWT1 Series,

BC858AWT1 Series

Preferred Devices

General Purpose

Transistors

PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT–323/SC–70 which is

designed for low power surface mount applications.

• Device Marking:

BC856AWT1 = 3A

BC856BWT1 = 3B

BC857BWT1 = 3F

BC857CWT1 = 3G

BC858AWT1 = 3J

BC858BWT1 = 3K

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current –

Continuous

Symbol BC856 BC857 BC858 Unit

VCEO

VCBO

VEBO

IC

–65

–80

–5.0

–100

–45

–50

–5.0

–100

–30

–30

–5.0

–100

V

V

V

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Total Device Dissipation

FR–5 Board (1)

TA = 25°C

Thermal Resistance,

Junction to Ambient

PD

RqJA

Junction and Storage

Temperature Range

TJ, Tstg

1. FR–5 = 1.0 x 0.75 x 0.062 in

Max

150

833

–55 to +150

Unit

mW

°C/W

°C

http://onsemi.com

COLLECTOR

3

1

BASE

2

EMITTER

3

1

2

SOT–323/SC–70

CASE 419

STYLE 3

DEVICE MARKING

See Device

Marking Listing

ORDERING INFORMATION

Device

Package

Shipping

BC856AWT1

SOT–323 3000 Units/Reel

BC856BWT1

SOT–323 3000 Units/Reel

BC857BWT1

SOT–323 3000 Units/Reel

BC857CWT1

SOT–323 3000 Units/Reel

BC858AWT1

SOT–323 3000 Units/Reel

BC858BWT1

SOT–323 3000 Units/Reel

Preferred devices are recommended choices for future use

and best overall value.

© Semiconductor Components Industries, LLC, 2001

1

October, 2001 – Rev. 2

Publication Order Number:

BC856AWT1/D

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