IXUC120N10 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXUC120N10 Datasheet PDF : 2 Pages
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IXUC 120N10
Symbol
Qg(on)
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
RthCH
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V, VDS = 80 V, ID = 50 A
VGS = 10 V, VDS = 40 A
ID = 90 A, RG = 4.7 Ω
220
nC
36
nC
88
nC
35
ns
85
ns
150
ns
70
ns
0.5 K/W
0.30
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VSD
IF = 60 A, VGS = 0 V
Note 3
trr
IF = 75 A, di/dt = -200 A/µs, VDS = 30 V
0.9 1.4 V
80
ns
Note: 1. MOSFET chip capability
2. Intrinsic diode capability
3. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Gate
2 - Drain
3 - Source
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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