AS4LC256K16E0-35JC Ver la hoja de datos (PDF) - Alliance Semiconductor
Número de pieza
componentes Descripción
Fabricante
AS4LC256K16E0-35JC Datasheet PDF : 25 Pages
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AS4LC256K16EO
®
Absolute maximum ratings
Parameter
Input voltage
Output voltage
Power supply voltage
Operating temperature
Storage temperature (plastic)
Soldering temperature × time
Power dissipation
Short circuit output current
Latch-up current
Symbol
Vin
Vout
VCC
TOPR
TSTG
TSOLDER
PD
Iout
Min
-1.0
-1.0
-1.0
0
-55
–
–
–
200
Max
+7.0
+7.0
+7.0
+70
+150
260 × 10
1
50
–
Unit
V
V
V
°C
°C
oC × sec
W
mA
mA
NOTE: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to abso-
lute maximum rating conditions for extended periods may affect reliability.
DC electrical characteristics
-35
Parameter
Input leakage
current
Symbol
IIL
Test conditions
0V ≤ Vin ≤ +5.5V
pins not under test = 0V
Min Max
-10 10
Output leakage
current
IOL
Operating power
supply current
ICC1
TTL standby power
supply current
ICC2
DOUT disabled,
0V ≤ Vout ≤ +5.5V
-10 10
RAS, UCAS, LCAS, address cycling;
tRC=min
–
70
RAS = UCAS = LCAS = VIH
– 200
Average power
supply current, RAS ICC3
refresh mode
EDO page mode
average power
ICC4
supply current
RAS cycling,
UCAS = LCAS = VIH,
tRC = min
RAS=UCAS=LCAS=VIL,
address cycling: tSC = min
– 50
– 40
CMOS standby
power supply
current
ICC5
RAS=UCAS=LCAS= VCC - 0.2V
– 400
CAS-before-RAS
refresh power
ICC6
supply current
RAS, UCAS, LCAS, cycling;
tRC = min
– 50
Output Voltage
VOH
VOL
Self refresh current ICC7
IOUT = -2 mA
IOUT = 2 mA
RAS = UCAS = LCAS=VIL,
WE = OE = A0-A8 = VCC-0.2V,
DQ0-DQ15 = VCC-0.2V,
0.2V are open
2.4 –
– 0.4
- 400
-45
Min Max
-10 10
-10 10
– 60
– 200
– 45
– 35
– 400
– 50
2.4 –
– 0.4
- 400
-60
Min Max Unit Note
-10 10 µA
-10 10 µA
– 50 mA 1,2
– 200 µA
– 40 mA 1
– 35 mA 1,2
– 400 µA
– 50 mA 1
2.4 – V
– 0.4 V
- 400 µA
4/11/01; V.1.1
Alliance Semiconductor
P. 3 of 25
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