IXTH36P10 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXTH36P10 Datasheet PDF : 2 Pages
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IXTH 36P10
Symbol
gfs
Ciss
C
oss
Crss
t
d(on)
tr
t
d(off)
tf
Q
g(on)
Qgs
Q
gd
R
thJC
RthCS
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = -10 V; ID = ID25, pulse test
6 12
S
2800
pF
VGS = 0 V, VDS = -25 V, f = 1 MHz
1100
pF
490
pF
35
ns
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
37
ns
RG = 4.7 Ω (External)
65
ns
28
ns
95
nC
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
27
nC
40
nC
0.65 K/W
0.25
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0
I
SM
Repetitive; pulse width limited by TJM
V
SD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, di/dt = 100 A/µs, VR = -50 V
-36 A
-144 A
-3 V
180
ns
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2
2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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