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Número de pieza
componentes Descripción
BUZ76 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
BUZ76
SIPMOS ® Power Transistor
Infineon Technologies
BUZ76 Datasheet PDF : 9 Pages
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9
BUZ 76
Avalanche energy
E
AS
=
Æ’
(
T
j
)
parameter:
I
D
= 3 A,
V
DD
= 50 V
R
GS
= 25
Ω
,
L
= 35 mH
190
mJ
160
E
AS
140
120
100
80
60
40
20
0
20 40 60 80 100 120 °C 160
T
j
Drain-source breakdown voltage
V
(BR)DSS
=
Æ’
(
T
j
)
Typ. gate charge
V
GS
=
Æ’
(
Q
Gate
)
parameter:
I
D puls
= 6 A
16
V
V
GS
12
10
0,2
V
DS
max
0,8
V
DS
max
8
6
4
2
0
0 4 8 12 16 20 24 nC 30
Q
Gate
480
V
460
V
(BR)DSS
450
440
430
420
410
400
390
380
370
360
-60
-20
20
60
100 °C 160
T
j
Semiconductor Group
8
07/96
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