WS256K64-25G4WI Ver la hoja de datos (PDF) - Unspecified
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WS256K64-25G4WI Datasheet PDF : 5 Pages
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WS256K64-XG4WX
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max Unit
Operating Temperature
TA
-55
+125
°C
Storage Temperature
TSTG
-65
+150
°C
Signal Voltage Relative to GND VG
-0.5
Vcc + 0.5 V
Junction Temperature
TJ
150
°C
Supply Voltage
VCC
-0.5
7.0
V
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Supply Voltage
VCC
Input High Voltage
VIH
Input Low Voltage
VIL
Operating Temp. (Mil.)
TA
4
Min
Max
Unit
4.5
5.5
V
2.2
VCC + 0.3
V
-0.3
+0.8
V
-55
+125
°C
TRUTH TABLE
CS
OE
WE
Mode
Data I/O
Power
H
X
X
Standby
High Z
Standby
L
L
H
Read
Data Out
Active
L
X
L
Write
Data In
Active
L
H
H Out Disable
High Z
Active
CAPACITANCE
(TA = +25°C)
Parameter
Symbol
Condition
Max Unit
Output Enable Capacitance COE VIN = 0V, f = 1.0MHz 50 pF
Write Enable Capacitance
CWE VIN = 0V, f = 1.0MHz 20 pF
Chip Select Capacitance
CCS VIN = 0V, f = 1.0MHz 20 pF
Data I/OCapacitance
CI/O VIN = 0V, f = 1.0MHz 20 pF
Address Input Capacitance CAD VIN = OV, f = 1.OMHZ 50 pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(VCC = 5.0V, GND = 0V, TA = -55°C to +125°C)
Parameter
Sym
Conditions
Min
Input Leakage Current
ILI
VCC = 5.5, VIN = GND to VCC
Output Leakage Current
ILO
CS = VIH, OE = VIH, VOUT = GND to VCC
Operating Supply Current
ICC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5
Standby Current
ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5
Output Low Voltage
VOL IOL = 8mA, VCC = 4.5
Output High Voltage
VOH IOH = -4.0mA, VCC = 4.5
2.4
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V
Max
10
10
920
68
0.4
Units
µA
µA
mA
mA
V
V
White Microelectronics • Phoenix, AZ • (602) 437-1520
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