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MT5C1005 Datasheet PDF : 13 Pages
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Austin Semiconductor, Inc.
SRAM
MT5C1005
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Note 5) (-55oC < TC < 125oC; VCC = 5V +10%)
DESCRIPTION
-20
-25
-35
-45
SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
READ CYCLE
READ cycle time
tRC
20
25
35
45
ns
Address access time
tAA
20
25
35
45 ns
Chip Enable access time
tACE
20
25
35
45 ns
Output hold from address change
tOH
3
3
3
3
ns
Chip Enable to output in Low-Z
tLZCE
3
3
3
3
ns 4, 6, 7
Chip disable to output in High-Z
tHZCE
10
12
20
25 ns 4, 6, 7
Chip Enable to power-up time
tPU
0
0
0
0
ns
4
Chip disable to power-down time
tPD
20
25
35
45 ns
4
Output Enable access time
tAOE
8
10
20
25 ns
Output Enable to output in Low-Z
tLZOE
0
0
0
0
ns 4, 6, 7
Output disable to output in High-Z
WRITE CYCLE
tHZOE
8
10
20
25 ns 4, 6, 7
WRITE cycle time
tWC
20
25
35
45
ns
Chip Enable to end of write
tCW
15
20
30
35
ns
Address valid to end of write
tAW
15
20
30
35
ns
Address setup time
tAS
0
0
0
0
ns
Address hold from end of write
tAH
0
0
0
0
ns
WRITE pulse width
tWP
15
20
30
35
ns
Data setup time
tDS
12
15
20
25
ns
Data hold time
tDH
0
0
0
0
ns
Write disable to output in Low-Z
tLZWE
3
3
3
3
ns 4, 6, 7
Write Enable to output in High-Z
tHZWE 0 8 0 10 0 15 0 20 ns 4, 6, 7
MT5C1005
Rev. 3.1 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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