2N3715 Ver la hoja de datos (PDF) - Central Semiconductor
Número de pieza
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Fabricante
2N3715 Datasheet PDF : 2 Pages
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2N3713 2N3715
2N3714 2N3716
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3713, 2N3714,
2N3715, and 2N3716 are silicon NPN power transistors
manufactured by the epitaxial-base process, mounted
in a hermetically sealed metal package designed for
medium speed switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
JC
2N3713
2N3715
80
2N3714
2N3716
100
60
80
7.0
10
4.0
150
-65 to +200
1.17
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICEV
VCE=Rated VCBO, VBE=1.5V
ICEV
VCE=Rated VCEO, VBE=1.5V, TC=150°C
IEBO
VEB=7.0V
BVCEO
IC=200mA (2N3713, 2N3715)
60
BVCEO
IC=200mA (2N3714, 2N3716)
80
VCE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714)
VCE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716)
VBE(SAT) IC=5.0A, IB=0.5A (2N3713, 2N3714)
VBE(SAT) IC=5.0A, IB=0.5A (2N3715, 2N3716)
VBE(ON)
VCE=2.0V, IC=3.0A
hFE
VCE=2.0V, IC=1.0A (2N3713, 2N3714)
40
hFE
VCE=2.0V, IC=1.0A (2N3715, 2N3716)
50
hFE
VCE=2.0V, IC=3.0A (2N3713, 2N3714)
15
hFE
VCE=2.0V, IC=3.0A (2N3715, 2N3716)
30
fT
VCE=10V, IC=0.5A, f=1.0MHz
4.0
tr
IC=5.0A, IB1=IB2=0.5A
0.4
ts
IC=5.0A, IB1=IB2=0.5A
0.3
tf
IC=5.0A, IB1=IB2=0.5A
0.4
MAX
1.0
10
5.0
1.0
0.8
2.0
1.5
1.5
120
150
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
mA
mA
mA
V
V
V
V
V
V
V
MHz
μs
μs
μs
R2 (18-June 2013)
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