BDY28 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

BDY28

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

BDY28

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0

250

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= 3mA; IE= 0

500

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.25A

VBE(sat) Base-Emitter Saturation Voltage

IC= 2A; IB=B 0.25A

ICES

Collector Cutoff Current

VCE= 400V; VBE= 0

0.6

V

1.2

V

1.0 mA

ICEO

Collector Cutoff Current

VCE= 250V; IB= 0

1.0 mA

IEBO

Emitter Cutoff Current

VEB= 10V; IC= 0

1.0 mA

hFE

DC Current Gain

IC= 2A; VCE= 4V

15

100

fT

Current Gain-Bandwidth Product

IC= 0.5A; VCE= 15V; f=10MHz

10

MHz

Switching Times

ton

Turn-On Time

toff

Turn-Off Time

IC= 5A; IB=B 1A

IC= 5A; IB1= 1A; IB2= -0.5A

0.5 μs

2.0 μs

‹ hFE Classifications

A

B

C

15-45 30-90 75-100

isc Website：www.iscsemi.cn

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