DN3525N8 Ver la hoja de datos (PDF) - Supertex Inc
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DN3525N8 Datasheet PDF : 4 Pages
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Thermal Characteristics
Package
TO-243AA
ID (continuous)*
360mA
ID (pulsed)
600mA
Power Dissipation
@ TA = 25°C
1.6W†
θjc
°C/W
15
* ID (continuous) is limited by max rated Tj.
† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
DN3525
θja
°C/W
78†
IDR*
360mA
IDRM
600mA
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
Conditions
BVDSX
Drain-to-Souce Breakdown Voltage
250
V
VGS = -5.0V, ID = 100µA
V
Gate-to-Source OFF Voltage
-1.5
GS(OFF)
∆VGS(OFF)
Change in VGS(OFF) with Temperature
I
Gate Body Leakage Current
GSS
ID(OFF)
Drain-to-Source Leakage Current
IDSS
Saturated Drain-to-Source Current
300
RDS(ON)
Static Drain-to-Source
ON-State Resistance
-3.5
V
V = 15V, I = 1.0mA
DS
D
4.5 mV/°C VDS = 15V, ID = 1.0mA
100
nA
V
GS
=
±20V,
V
DS
=
0V
1.0
µA
VGS = -5.0V, VDS = Max Rating
1.0
mA
VGS = -5.0V, VDS = 0.8 Max Rating
T
A
=
125°C
mA
VGS = 0V, VDS = 15V
6.0
Ω
VGS = 0V, ID = 200mA
∆RDS(ON)
Change in RDS(ON) with Temperature
1.1
GFS
Forward Transconductance
225
CISS
Input Capacitance
270 350
COSS
Common Source Output Capacitance
20
60
CRSS
Reverse Transfer Capacitance
5.0
20
td(ON)
Turn-ON Delay Time
20
tr
Rise Time
25
t
Turn-OFF Delay Time
25
d(OFF)
tf
Fall Time
40
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
800
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
%/°C
mg
pF
ns
V
ns
VGS = 0V, ID = 200mA
ID = 150mA, VDS=10V
VGS = -5.0V, VDS = 25V, f =1.0Mhz
VDD = 25V,
ID = 150mA,
R
GEN
=
25Ω,
VGS = 0V to -10V
VGS = -5.0V, ISD = 150mA
VGS = -5.0V, ISD = 150mA
Switching Waveforms and Test Circuit
VDD
0V
INPUT
-10V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
PULSE
GENERATOR
Rgen
INPUT
RL
OUTPUT
D.U.T.
2
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