RF2105L Ver la hoja de datos (PDF) - RF Micro Devices
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RF2105L Datasheet PDF : 8 Pages
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Typical Applications
• 900 MHz ISM Band Applications
• 400 MHz Industrial Radios
• Digital Communication Systems
RF2105L
HIGH POWER LINEAR UHF AMPLIFIER
• Driver Stage for Higher Power Applications
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
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Product Description
The RF2105L is a high power, high efficiency linear
amplifier IC. The device is manufactured on an advanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in digital cellular phone transmitters or ISM
applications requiring linear amplification. It is packaged
in a 16-lead ceramic package with a backside ground.
The device is self-contained with the exception of the out-
put matching network and power supply feed line.
0.258
0.242
1
0.150
0.050
0.258
0.242
0.075 0.033
0.065 0.017
0.025
0.080
R0.008
0.050
0.208
0.192
sq.
0.022
0.018
0.080
Optimum Technology Matching® Applied
Si BJT
üGaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
1 16 15 14
VCC3 2
VCC1 3
BIAS
CIRCUIT
13 RF OUT
12 GND
GND 4
11 RF OUT
PD 5
10 RF OUT
6789
Functional Block Diagram
Rev B3 010720
Package Style: QLCC-16 Alumina
Features
• Single 2.7V to 6.5V Supply
• Up to 1.2W CW Output Power
• 33dB Small Signal Gain
• 48% Efficiency
• Digitally Controlled Power Down Mode
• Small Package Outline (0.25" x 0.25")
Ordering Information
RF2105L
High Power Linear UHF Amplifier
RF2105L PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
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