H2N7000 Ver la hoja de datos (PDF) - Shantou Huashan Electronic Devices
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H2N7000 Datasheet PDF : 4 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
H2N7000
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These products have been designed to minimize on-state resistance While
provide rugged, reliable, and fast switching performance. These products
are particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers, and other
switching applications.
█ Features
High density cell design for low Rds(on).
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
█ Maximum Ratings（Ta=25℃ unless otherwise specified）
TO-92
1- S 2-G 3-D
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature ---------------------------------------------- -55~150℃
VDSS —— Drain-Source Voltage ---------------------------------------------------------- 60V
VDGR —— Drain-Gate Voltage (RGS≤1MΩ) --------------------------------------------------------- 60V
VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V
ID —— Drain Current (Continuous) ---------------------------------------------------------------- 200mA
PD —— Maximum Power Dissipation ----------------------------------------------------------- 400mW
█ Electrical Characteristics（Ta=25℃ unless otherwise specified）
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VDS(ON)
ID (ON)
gFS
Ciss
Coss
Crss
ton
toff
Items
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate – Body Leakage, Forward
Gate Threshold Voltage
Static Drain-Source On-Resistance
Drain-Source On-Voltage
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Time
Turn - Off Time
Min.
60
0.8
75
Typ. Max. Unit
Conditions
V VGS=0V, ID=10µA
1
µA VDS =48V, VGS=0V
±10 nA VGS= ±15V , VDS =0V
3.0 V VDS = VGS , ID=1mA
5
Ω VGS=10V, ID=500mA
5.3 Ω VGS=4.5V, ID=75mA
2.5 V VGS=10V, ID=500mA
0.4 V VGS=4.5V, ID=75mA
mA VGS=4.5V, VDS =10V
320
mS VDS=10V, ID=200mA
20
50 pF
VDS = 25 V, VGS = 0 V,
11 25 pF f = 1.0 MHz
4 5 pF
10 nS VDD = 15 V, RL = 25 Ω,ID = 500
10
nS m A,VGS = 10 V, RGEN = 25 Ω
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