IXFH75N10Q Ver la hoja de datos (PDF) - IXYS CORPORATION

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componentes Descripción

Fabricante

IXFH75N10Q

HiPerFET™ Power MOSFETs Q-Class

IXYS CORPORATION 

Advanced Technical Information

HiPerFETTM

Power MOSFETs

Q-Class

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt

Low Gate Charge and Capacitances

IXFH 75N10Q

IXFT 75N10Q

VDSS

ID25

RDS(on)

= 100 V

= 75 A

= 20 mW

trr £ 200ns

Symbol

VDSS

VDGR

VGS

VGSM

ID25

IDM

IAR

EAR

EAS

dv/dt

PD

TJ

TJM

Tstg

TL

Md

Weight

Test Conditions

TJ = 25°C to 150°C

TJ = 25°C to 150°C; RGS = 1 MΩ

Continuous

Transient

TC = 25°C

TC = 25°C, pulse width limited by TJM

TC = 25°C

TC = 25°C

TC = 25°C

IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

TJ ≤ 150°C, RG = 2 Ω

TC = 25°C

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

TO-247 AD

TO-268

Maximum Ratings

100

V

100

V

±20

V

±30

V

75

A

300

A

75

A

30

mJ

1.5

J

5

V/ns

300

W

-55 ... +150

°C

150

°C

-55 ... +150

°C

300

°C

1.13/10 Nm/lb.in.

6

g

4

g

Symbol

Test Conditions

(TJ = 25°C, unless otherwise specified)

VDSS

VGS = 0 V, ID = 250 µA

Characteristic Values

Min. Typ. Max.

100

V

VGS(th)

VDS = VGS, ID = 4 mA

2.0

4V

IGSS

VGS = ±20 VDC, VDS = 0

±100 nA

I DSS

VDS = VDSS

VGS = 0 V

TJ = 25°C

TJ = 125°C

25 µA

1 mA

RDS(on)

VGS = 10 V, ID = 0.5 ID25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

20 m Ω

TO-247 AD (IXFH)

(TAB)

TO-268 (IXFT) Case Style

G

G = Gate

S = Source

S

D = Drain

TAB = Drain

(TAB)

Features

l IXYS advanced low gate charge

process

l International standard packages

l Low gate charge and capacitance

- easier to drive

- faster switching

l Low RDS (on)

l Unclamped Inductive Switching (UIS)

rated

l Molding epoxies meet UL 94 V-0

flammability classification

Advantages

l Easy to mount

l Space savings

l High power density

© 1999 IXYS All rights reserved

98550A (6/99)

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