IXFN180N10 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
IXFN180N10 Datasheet PDF : 6 Pages
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Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs
VDS = 10V, ID = 60A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 90A
RG = 1 (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 90A
RthJC
RthCS
Characteristic Values
Min. Typ. Max.
45
76
S
10.90
nF
3.55
nF
1.94
nF
50
ns
90
ns
140
ns
65
ns
390
nC
55
nC
195
nC
0.21C/W
0.05
C/W
IXFN180N10
SOT-227B (IXFN) Outline
(M4 screws (4x) supplied)
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
QRM
IRM
IF = 50A, -di/dt = 100A/s
VR = 50V, VGS = 0V
Characteristic Values
Min. Typ. Max.
180 A
720 A
1.5 V
250 ns
1.1
C
13
A
Note: 1. Pulse test, t 300μs, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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