DB151 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
Número de pieza
componentes Descripción
Fabricante
DB151 Datasheet PDF : 3 Pages
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SILICON BRIDGE RECTIFIERS
Production specification
DB151--DB157
FEATURES
z Rating to 1000V PRVP
z Surge overload rating to 40 Amperes peak
Pb
Lead-free
z Glass passivated chip junctions
z Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
z Lead solderable per MIL-STD-202 method 208
z Lead: silver plated copper, solderde plated
z Plastic material has UL flammability classification94V-O
Maximum Ratings(@TA = 25°C unless otherwise specified)
Characteristic
Symbol DB151 DB152 DB153 DB154 DB155 DB156 DB157 UNITS
Maximum Recurrent Peak Reverse Voltage VRRM
50
100
200
400
600
800 1000
V
Maximum RMS Reverse Voltage
VRMS
35
75
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800 1000
V
Maximum average forward Output current
@TA=25℃
IF(AV)
1.5
A
Peak forward surge current
8.3ms single half-sine-wave
IFSM
40
A
superimposed on rated load
Thermal Characteristics
Characteristic
Symbol DB151 DB152 DB153 DB154 DB155 DB156 DB157 UNITS
Operating junction temperature range
TJ
-55 -- +150
℃
Storage temperature range
TSTG
-55 -- +150
℃
Electrical Characteristics (@TA = 25°C unless otherwise specified)
Characteristic
Maximum instantaneous forward voltage
at 1.5A
Maximum reverse current @TA=25℃
at rated DC blocking voltage @TA=100℃
Symbol DB151 DB152 DB153 DB154 DB155 DB156 DB157 UNITS
VF
1.1
V
5.0
μA
IR
0.5
mA
Document Number: DFM704AA
www.gmicroelec.com
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