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P4C1256 Datasheet PDF : 17 Pages
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P4C1256
MAXIMUM RATINGS(1)
Symbol
Parameter
V
Power Supply Pin with
CC
Respect to GND
VTERM
Terminal Voltage with
Respect to GND
(up to 7.0V)
T
Operating Temperature
A
Value Unit
–0.5 to +7 V
–0.5 to
VCC +0.5
V
–55 to +125 °C
Symbol Parameter
TBIAS
Temperature Under
Bias
TSTG
Storage Temperature
PT
Power Dissipation
IOUT
DC Output Current
Value Unit
–55 to +125 °C
–65 to +150 °C
1.0
W
50
mA
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade(2)
Ambient
Temperature
Military
–55°C to +125°C
Industrial –40°C to +85°C
Commercial 0°C to +70°C
GND
0V
0V
0V
VCC
5.0V ± 10%
5.0V ± 10%
5.0V ± 10%
CAPACITANCES(4)
VCC = 5.0V, TA = 25°C, f = 1.0MHz
Symbol Parameter
Conditions Typ. Unit
CIN Input Capacitance VIN = 0V 8 pF
COUT Output Capacitance VOUT = 0V 10 pF
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
Symbol
Parameter
Test Conditions
V
IH
Input High Voltage
V Input Low Voltage
IL
VHC CMOS Input High Voltage
VLC CMOS Input Low Voltage
VOL Output Low Voltage
(TTL Load)
I = +8 mA, V = Min.
OL
CC
P4C1256
Min Max
P4C1256L Unit
Min Max
2.2
VCC +0.5
2.2
V +0.5
CC
V
–0.5(3)
0.8
–0.5(3)
0.8
V
V –0.2
CC
VCC
+0.5
V
CC
–0.2
VCC +0.5
V
–0.5(3)
0.2
–0.5(3)
0.2
V
0.4
0.4
V
VOH Output High Voltage
(TTL Load)
IOH = –4 mA, VCC = Min.
2.4
2.4
V
I
Input Leakage Current
LI
V = Max.
CC
VIN = GND to VCC
Mil. –10
Ind./Com’l. –5
VCC = Max.,
Mil. –10
I
LO
Output Leakage Current
CE = V ,
IH
Ind./Com’l. –5
VOUT = GND to VCC
CE ≥ VIH
Mil. ___
ISB
Standby Power Supply
VCC= Max,
Ind./Com’l. ___
Current (TTL Input Levels) f = Max., Outputs Open
+10
–5
+5
n/a
+10
–5
+5
n/a
45
___
30
___
+5 µA
n/a
+5 µA
n/a
30 mA
n/a
Standby Power Supply
CE ≥ VHC
VCC= Max,
Mil. ___
20
___
10 mA
Ind./Com’l. ___
10
___
n/a
ISB1 Current
f = 0, Outputs Open
(CMOS Input Levels)
V
IN
≤
V
LC
or
V
IN
≥
V
HC
N/A = Not Applicable
Document # SRAM119 REV G
Page 2 of 17
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