RF2301PCBA Ver la hoja de datos (PDF) - RF Micro Devices

Número de pieza

componentes Descripción

Fabricante

RF2301PCBA

HIGH ISOLATION BUFFER AMPLIFIER

RF Micro Devices 

RF2301

Pin Function Description

Interface Schematic

1

GND

Low inductance ground connections. Use individual vias to backside

ground plane, placed within 0.030" of pin landing for optimum perfor-

mance.

2

GND

Same as pin 1.

3

RF IN

DC-coupled RF input. A broadband impedance match is produced by

internal shunt resistive feedback. The DC level is 0V. If a DC voltage is

present from connected circuitry, an external DC-blocking capacitor is

required for the proper DC operating point.

4

GND

Same as pin 1.

5

GND

Same as pin 1.

6

RF OUT Open drain RF output. A broadband impedance match is produced by

an external 100Ω resistor to power supply as shown in Application

Schematic 1. Approximately 3dB improvement in gain and output

VDD1

VDD2

4

power can be obtained over at least a 20% bandwidth by replacing the

resistor to power supply with an external chip inductor network as

RF IN

shown in Application Schematic 2. An external DC-blocking capacitor is

RF OUT

required if the following circuitry is not DC-blocked.

7

VDD2

Power supply connections. Bypass with external chip capacitor and

individual via to backside ground plane.

8

VDD1

Power supply connections. Bypass with external chip capacitor and

individual via to backside ground plane.

Rev A8 010717

4-39

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