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CXG1039TN Ver la hoja de datos (PDF) - Sony Semiconductor

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CXG1039TN Datasheet PDF : 5 Pages
1 2 3 4 5
CXG1039TN
Electrical Characteristics (1)
VDD=3 V, Vctl (L)=0 V, Vctl (H)=2.8 V±3 %,
@2 GHz, Pin=10 dBm, Impedance at all ports : 50
(Ta=25 °C)
Item
Symbol
Min.
Typ.
Max.
Unit
Insertion loss
IL
0.8
1.2
dB
Isolation
ISO
40
50
dB
ON port VSWR
VSWR (ON)
1.2
1.5
OFF port VSWR
3rd order input intercept point
VSWR (OFF)
1.7
2.0
1
IP3
35
dBm
Input power for 1 dBm compression
P1dB
12
17
dBm
Switching speed
TSW
1
5
µs
Bias current
IDD
220
350
µA
Control current
ICRL
80
150
µA
1 two-tone input power up to 5 dBm
Electrical Characteristics (2)
VDD=3 V, Vctl (L)=0 V, Vctl (H)=2.8 V±3 %,
@2 GHz, Pin=10 dBm, Impedance at all ports : 50
Item
Insertion loss
Isolation
ON port VSWR
OFF port VSWR
3rd order input intercept point
Input power for 1 dBm compression
Switching speed
Bias current
Control current
Symbol
Min.
IL
ISO
40
VSWR (ON)
VSWR (OFF)
1
IP3
35
P1dB
12
TSW
IDD
ICRL
1 two-tone input power up to 5 dBm
(Ta=–35 °C to +85 °C)
Typ.
Max.
Unit
0.8
1.4
dB
50
dB
1.2
1.5
1.7
2.0
dBm
17
dBm
1
5
µs
220
450
µA
80
180
µA
—4—

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