STTH20003TV Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STTH20003TV Datasheet PDF : 7 Pages
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Characteristics
1
Characteristics
STTH20003TV
Table 2. Thermal resistance
Symbol
Parameter
Value (max).
Rth(j-c) Junction to case
Per diode
0.55
Total
0.35
Rth(c) Coupling
0.1
When diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Unit
°C/W
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min. Typ Max.
Unit
IR(1)
Reverse leakage
current
Tj = 25° C
VR = 300 V
Tj = 125° C
200
µA
0.2 2
mA
VF(2) Forward voltage drop
Tj = 25° C
IF = 100 A
Tj = 150° C
1.20
V
0.8 0.95
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.75 x IF(AV) + 0.0020 IF2(RMS)
Table 4.
Symbol
Dynamic characteristics (per diode)
Parameter
Test conditions
Min Typ Max Unit
trr
IRM
Sfactor
tfr
VFP
Reverse recovery
time
Reverse recovery
current
Softness factor
Forward recovery
time
Forward recovery
voltage
Tj = 25° C
IF = 0.5 A Irr = 0.25 A IR = 1 A
IF = 1 A dIF/dt = -50 A/µs
VR = 30 V
Tj = 125° C
IF = 100 A VR = 200 V
dIF/dt = -200 A/µs
Tj = 125° C
IF = 100 A VR = 200 V
dIF/dt = -200 A/µs
Tj = 25° C
IF = 100 A dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
Tj = 25° C
IF = 100 A dIF/dt = 200 A/µs
VFR = 1.1 x VFmax
55
ns
90
18 A
0.3
1400 ns
5V
2/7
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