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STTH20003TV(2018) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
STTH20003TV
(Rev.:2018)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTH20003TV Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STTH20003
Characteristics (curves)
Figure 5. Peak reverse recovery current versus dIF/dt
(typical values)
IRM(A)
45
VR=200 V
Tj=125 °C
30
IF = 2 x IF(AV)
IF = IF(AV)
15
IF = IF(AV) / 2
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 6. Reverse recovery time versus dIF/dt (typical
values)
180 tRR(ns)
120
IF = 2 x IF(AV)
VR=200 V
Tj=125 °C
IF = IF(AV)
60
IF = IF(AV) / 2
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 7. Reverse recovery softness factor versus dIF/dt
(typical values)
SFACTOR
0.8
VR=200 V
Tj=125 °C
0.6
0.4
0.2
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8. Relative variations of dynamic parameters
versus junction temperature
2.4
SFACTOR
1.6
IF=IF(AV)
VR=200 V
Reference: Tj=125 °C
0.8
IRM
0.0
25
50
Tj(°C)
75
100
125
Figure 9. Junction capacitance versus reverse voltage applied (typical values)
C(pF)
10000
1000
100
1
VR(V)
10
100
1000
DS1796 - Rev 3
page 5/10

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