2N2369 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
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Fabricante
2N2369 Datasheet PDF : 4 Pages
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2N2369
THERMAL DATA
Rth j-cas e Thermal Resistance Junction-case
R th j-amb Thermal Resistance Junction-ambient
Max
146
°C/W
Max
486
°C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
ICBO
V(BR) CBO
V(BR) CE S
V(BR) CEO*
V(BR) EBO
V CE (s at )*
VBE (sat) *
hFE*
Parameter
Collector Cutoff
Current (IE = 0)
Collector-base Breakdown
Voltage (IE = 0)
Collector-emitter Breakdown
Voltage (VBE = 0)
Collector-emitter Breakdown
Voltage (IB = 0)
Emitter-base Breakdown
Voltage (IC = 0)
Collector-emitter Saturation
Voltage
Base-emitter Saturation
Voltage
DC Current Gain
fT
Transition Frequency
Test Conditions
VCB = 20 V
VCB = 20 V
T amb = 150 °C
IC = 10 µA
IC = 10 µA
IC = 10 mA
IE = 10 µA
IC = 10 mA
IB = 1 mA
IC = 10 mA
IB = 1 mA
IC = 10 mA
IC = 100 mA
IC = 10 mA
T amb = – 55 °C
VCE = 1 V
VCE = 2 V
VCE = 1 V
I C = 10 mA
f = 100 MHz
VCE = 10 V
Min.
40
40
15
4.5
0.7
40
20
20
500
Typ.
0.2
0.75
650
C CBO
Collector-base Capacitance IE = 0
f = 1 MHz
VCB = 5 V
2.5
ts
Storage Time
IC = 10 mA
VCC = 10 V
I B1 = – I B2 = 10 mA
6
ton
Turn-on Time
IC = 10 mA
I B1 = 3 mA
VCC = 3 V
9
toff
Turn-off Time
IC = 10 mA
I B1 = 3 mA
VCC = 3 V
I B 2 = – 1.5 mA
13
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Max.
0.4
30
0.25
0.85
120
4
13
12
18
Unit
µA
µA
V
V
V
V
V
V
MHz
pF
ns
ns
ns
2/4
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