EVDD415 Ver la hoja de datos (PDF) - IXYS CORPORATION
Número de pieza
componentes Descripción
Fabricante
EVDD415 Datasheet PDF : 2 Pages
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Figure 4 - EVDD415 Schematic Diagram And Circuit Board Layout
EVDD415
NOTES: 1) The schematic shows a DE275 MOSFET, however a DEI DE-150 or DE-275 package type may be installed on the
EVDD415. The EVDD415 is provided without a MOSFET, so that the user can install the appropriate MOSFET for their
application.
Figure 5 - EVDD415 2.2ns
(2V to 12V) Gate Rise Time
CL=1000pF
Figure 6 - EVDD415 Typical
Gate Waveform
CL=1000pF
Figure 7 - EVDD415 Typical
Output Waveform
F=50MHz Burst, CL=1000pF
For additional performance data and electrical waveforms, see the IXDD415SI Data Sheet on the DEI or IXYS web sites.
Directed Energy, Inc.
An IXYS Company
2401 Research Blvd. Ste. 108
Ft. Collins, CO 80526
Tel: 970-493-1901; Fax: 970-493-1903
e-mail: deiinfo@directedenergy.com
www.directedenergy.com
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
e-mail: sales@ixys.net
www.ixys.net
2
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: marcom@ixys.de
Doc #9200-0232 Rev 2
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