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MX27C1610

16M-BIT [2M x 8/1M x 16] CMOS OTP ROM

Macronix International 

MX27C1610

READ/RESET COMMAND

The read or reset operation is initiated by writing the

read/reset command sequence into the command reg-

ister. Microprocessor read cycles retrieve array data

from the memory. The device remains enabled for reads

until the CIR contents are altered by a valid command

sequence.

The device will automatically power-up in the read/re-

set state. In this case, a command sequence is not

required to read data. Standard microprocessor read

cycles will retrieve array data. This default value en-

sures that no spurious alteration of the memory content

occurs during the power transition. Refer to the AC Read

Characteristics and Waveforms for the specific timing

parameters.

The MX27C1610 is accessed when CE and OE are low

the data stored at the memory location determined by

the address pins is asserted on the outputs. The out-

puts are put in the high impedance state whenever CE

or OE is high. This dual line control gives designers

flexibility in preventing bus contention.

Note that the read/reset command is not valid when pro-

gram is in progress.

PAGE PROGRAM

The device is set up in the programming mode when

the programming Voltage Vpp=10V is applied with

Vcc=5V, and OE=VIH.

Any attempt to write to the device without the three-

cycle command sequence will not start the internal Write

State Machine(WSM), no data will be written to the de-

vice.

After three-cycle command (see command table) se-

quence is given, a word load is performed by applying a

low pulse on the CE input with CE low and OE high.

The address is latched on the falling edge of CE The

data is latched by the rising edge of CE . Maximum of

128 bytes of data may be loaded into each page by the

same procedure as outlined in the page program sec-

tion below.

WORD-WIDE LOAD

Word loads are used to enter the 128 bytes(64 words)

of a page to be programmed or the software codes for

data protection. A word load is performed by applying a

low pulse on the CE input with CE and OE high. The

address is latched on the falling edge of CE. The data is

latched by the rising edge of CE.

PROGRAM

The device is programmed on a page basis. Once the

bytes of a page are loaded into the device, they are

simultaneously programmed during the internal pro-

gramming period. After the first data word has been

loaded into the device, successive words are entered in

the same manner. The time between word loads must

be less than 30us otherwise the load period could be

teminated. A6 to A19 specify the page address, i.e.,

the device is page-aligned on 128 bytes(64

words)boundary. The page address must be valid dur-

ing each high to low transition of CE. A0 to A5 specify

the word address withih the page. The word may be

loaded in any order; sequential loading is not required.

If a high to low transition of CE is not detected whithin

100us of the last low to high transition, the load period

will end and the internal programming period will start.

The Auto page program terminates when status on Q7

is "1" at which time the device stays at read status reg-

ister mode until the CIR contents are altered by a valid

command sequence.

P/N:PM0593

REV. 1.4, NOV. 19, 2002

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