DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

28C16A-90 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
28C16A-90
ON-Semiconductor
ON Semiconductor ON-Semiconductor
28C16A-90 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
CAT28C16A
2.4 V
0.45 V
INPUT PULSE LEVELS
2.0 V
0.8 V
REFERENCE POINTS
Figure 2. A.C. Testing Input/Output Waveform (Note 11)
11. Input rise and fall times (10% and 90%) < 10 ns.
1.3V
1N914
DEVICE
UNDER
TEST
3.3K
CL = 100 pF
OUT
CL INCLUDES JIG CAPACITANCE
Figure 3. A.C. Testing Load Circuit (example)
Table 7. A.C. CHARACTERISTICS, WRITE CYCLE (VCC = 5 V ±10%, unless otherwise specified.)
28C16A90
28C16A12
28C16A20
Symbol
Parameter
Min
Max
Min
Max
Min
Max
tWC
Write Cycle Time
5
5
10
tAS
Address Setup Time
tAH
Address Hold Time
tCS
CE Setup Time
tCH
CE Hold Time
0
0
10
100
100
100
0
0
0
0
0
0
tCW (Note 12)
tOES
tOEH
tWP (Note 12)
tDS
CE Pulse Time
OE Setup Time
OE Hold Time
WE Pulse Width
Data Setup Time
110
110
150
0
0
15
0
0
15
110
110
150
60
60
50
tDH
Data Hold Time
0
0
10
tDL
Data Latch Time
5
10
5
10
50
tINIT (Note 13) Write Inhibit Period After Powerup
0.05
100
0.05
100
5
20
12. A write pulse of less than 20 ns duration will not initiate a write cycle.
13. This parameter is tested initially and after a design or process change that affects the parameter.
Units
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
http://onsemi.com
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]