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Número de pieza
componentes Descripción
BUW49(1997) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
BUW49
(Rev.:1997)
HIGH POWER NPN SILICON TRANSISTORS
STMicroelectronics
BUW49 Datasheet PDF : 4 Pages
1
2
3
4
BUW48 / BUW49
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
1
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
I
CEX
Collector Cut-off
Current
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
V
EB0
V
CE(sat)
∗
Emitter-base
Voltage (I
c
= 0)
Collector-Emitter
Saturation Voltage
V
BE(sat)
∗
f
T
Base-Emitter
Saturation Voltage
Transition Frequency
Test Conditions
V
CE
= V
CEX
V
BE
= -1.5V
V
CE
= V
CEX
V
BE
= -1.5V T
c
=125
o
C
V
EB
= 5 V
Min.
I
C
= 0.2A
L = 25 mH for
BUW48
60
for
BUW49
80
I
E
= 50 mA
7
I
C
= 20A
I
C
= 40A
I
C
= 15A
I
C
= 30A
I
C
= 40A
I
C
= 30A
I
C
= 1A
I
B
= 2A
I
B
= 4A
I
B
= 1.5A
I
B
= 3A
I
B
= 4A
I
B
= 3A
V
CE
= 15V
for
BUW48
for
BUW49
for
BUW48
for
BUW49
for
BUW48
for
BUW49
f = 15 MHz
Typ.
8
Max.
1
3
1
0.6
1.4
0.5
1.2
2.1
2
Unit
mA
mA
mA
V
V
V
V
V
V
V
V
V
MHz
RESISTIVE LOAD
Symbol
Parameter
Test Conditions
t
on
Turn-on Time
t
s
Storage Time
t
f
Fall Time
for BUW48
V
CC
= 60V
I
B1
= -I
B2
= 4A
I
C
= 40A
t
s
Storage Time
t
f
Fall Time
for BUW48
V
CC
= 60V
I
B1
= -I
B2
= 4A
I
C
= 40A
t
on
Turn-on Time
t
s
Storage Time
t
f
Fall Time
for BUW49
V
CC
= 80V
I
B1
= -I
B2
= 4A
I
C
= 30A
t
s
Storage Time
t
f
Fall Time
for BUW49
V
CC
= 80V
I
B1
= -I
B2
= 4A
∗
Pulsed: Pulse duration = 300
µ
s, duty cycle < 1.5 %
I
C
= 30A
Min.
Typ.
1.2
0.6
0.17
Max.
1.5
1.1
0.25
Unit
µ
s
µ
s
µ
s
1.65
µ
s
0.5
µ
s
0.8
1.2
µ
s
0.6
1.1
µ
s
0.15 0.25
µ
s
1.65
µ
s
0.5
µ
s
2/4
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