DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BUW49(1997) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
BUW49
(Rev.:1997)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
BUW49 Datasheet PDF : 4 Pages
1 2 3 4
BUW48 / BUW49
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
ICEX Collector Cut-off
Current
IEBO
Emitter Cut-off
Current (IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
VEB0
VCE(sat)
Emitter-base
Voltage (Ic = 0)
Collector-Emitter
Saturation Voltage
VBE(sat)
fT
Base-Emitter
Saturation Voltage
Transition Frequency
Test Conditions
VCE = VCEX VBE = -1.5V
VCE = VCEX VBE = -1.5V Tc =125oC
VEB = 5 V
Min.
IC = 0.2A
L = 25 mH for BUW48 60
for BUW49 80
IE = 50 mA
7
IC = 20A
IC = 40A
IC = 15A
IC = 30A
IC = 40A
IC = 30A
IC = 1A
IB = 2A
IB = 4A
IB = 1.5A
IB = 3A
IB = 4A
IB = 3A
VCE = 15V
for BUW48
for BUW49
for BUW48
for BUW49
for BUW48
for BUW49
f = 15 MHz
Typ.
8
Max.
1
3
1
0.6
1.4
0.5
1.2
2.1
2
Unit
mA
mA
mA
V
V
V
V
V
V
V
V
V
MHz
RESISTIVE LOAD
Symbol
Parameter
Test Conditions
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
for BUW48
VCC = 60V
IB1 = -IB2 = 4A
IC = 40A
ts
Storage Time
tf
Fall Time
for BUW48
VCC = 60V
IB1 = -IB2 = 4A
IC = 40A
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
for BUW49
VCC = 80V
IB1 = -IB2 = 4A
IC = 30A
ts
Storage Time
tf
Fall Time
for BUW49
VCC = 80V
IB1 = -IB2 = 4A
Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 %
IC = 30A
Min.
Typ.
1.2
0.6
0.17
Max.
1.5
1.1
0.25
Unit
µs
µs
µs
1.65 µs
0.5
µs
0.8
1.2
µs
0.6
1.1
µs
0.15 0.25 µs
1.65 µs
0.5
µs
2/4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]