BSX20 Ver la hoja de datos (PDF) - STMicroelectronics
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BSX20 Datasheet PDF : 6 Pages
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BSX20
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-Case
Rthj- amb Thermal Resistance Junction-Ambient
Max
146
Max
486
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
ICES Collect or Cut-off
Current (VBE = 0)
ICEX Collect or Cut-off
Current (VBE = -3V)
IBEX Base Cut-off Current
(VBE = -3V)
IEBO Emitt er Cut-off Current
(IC = 0)
VCER( sus)∗ Collect or-Emitter
Sustaining Voltage
(RBE = 10Ω)
V(BR)CEO ∗
VCE(sat )∗
Co lle ct or- Em it t er
Breakdown Voltage
(IB = 0)
Co lle ct or- Em it t er
Saturation Voltage
VBE(s at)∗
V BE(o n )∗
hFE∗
Ba se-Em it t er
Saturation Voltage
Base-Emitter O n
Voltage
DC Current G ain
fT
Transition F requency
VCB = 20 V
VCB = 20 V
VCE = 15 V
VCE = 40 V
VCE = 15 V
Tamb = 150 oC
Tamb = 55 oC
Tamb = 55 oC
VCE = 15 V Tamb = 55 oC
VEB = 4.5 V
IC = 10 mA
IC = 10 mA
IC = 10 mA
IC = 100 mA
IC = 10 mA
IB = 1 mA
IB = 10 mA
IB = 0.3 mA
IC = 10 mA IB = 1 mA
IC = 100 mA IB = 10 mA
IC = 30 µA
VCE = 20 V
Tamb = 100 oC
IC = 10 mA VCE = 1 V
IC = 100 mA VCE = 2 V
IC = 10 mA VCE = 1 V
Tamb = -55 oC
IC = 10 mA VCE = 10 V
CCBO
Collector Base
Capacitance
IE = 0 VCB = 5 V
CEBO
Emitter Base
Capacitance
IC = 0 VEB = 1 V
ts∗∗ Storage Time
VCC = 10 V IC = 10 mA
IB1 = -IB2 = 10 mA
ton∗∗ Turn-on T ime
VCC = 3 V
IB1 = 3 mA
VCC = 6 V
IB1 = 40 mA
IC = 10 mA
IC = 100 mA
toff∗∗ Turn-off T ime
VCC = 3 V
IB1 = 3 mA
VCC = 6 V
IB1 = 40 mA
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
∗∗ See test circuit
IC = 10 mA
IB2 = -1.5 mA
IC = 100 mA
IB2 = -20 mA
Min. Typ.
20
15
0.7
350
40
20
20
500 600
6
M a x.
0.4
30
0.4
1
0.6
0.6
10
0.25
0.6
0.3
0.85
1.5
60
4
4.5
13
12
7
18
21
Unit
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
mV
MHz
pF
pF
ns
ns
ns
ns
ns
2/6
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