IRFIB7N50A
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
โV(BR)DSS/โTJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
500 โโโ โโโ V VGS = 0V, ID = 250ยตA
โโโ 0.61 โโโ V/ยฐC Reference to 25ยฐC, ID = 1mAย
โโโ โโโ 0.52 โฆ VGS = 10V, ID = 4.0A ย
2.0 โโโ 4.0 V VDS = VGS, ID = 250ยตA
โโโ โโโ 25
โโโ โโโ 250
ยตA VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125ยฐC
โโโ โโโ 100 nA VGS = 30V
โโโ โโโ -100
VGS = -30V
Dynamic @ TJ = 25ยฐC (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitanceย
Coss
Output Capacitanceย
Coss eff. Effective Output Capacitance
Avalanche Characteristics
Min. Typ. Max. Units
Conditions
6.1 โโโ โโโ S VDS = 50V, ID = 6.6Aย
โโโ โโโ 52
ID = 11A
โโโ โโโ 13 nC VDS = 400V
โโโ โโโ 18
VGS = 10V, See Fig. 6 and 13 ยย
โโโ 14 โโโ
VDD = 250V
โโโ 35 โโโ ns ID = 11A
โโโ 32 โโโ
RG = 9.1โฆ
โโโ 28 โโโ
RD = 22โฆ,See Fig. 10 ยย
โโโ 1423 โโโ
VGS = 0V
โโโ 208 โโโ
VDS = 25V
โโโ 8.1 โโโ pF ฦ = 1.0MHz, See Fig. 5ย
โโโ 2000 โโโ
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
โโโ 55 โโโ
VGS = 0V, VDS = 400V, ฦ = 1.0MHz
โโโ 97 โโโ
VGS = 0V, VDS = 0V to 400V ย
ย
Parameter
EAS
Single Pulse Avalanche Energyยย
IAR
Avalanche Currentยย
EAR
Repetitive Avalanche Energyย
Thermal Resistance
Typ.
โโโ
โโโ
โโโ
Max.
275
11
6.0
Units
mJ
A
mJ
Parameter
RฮธJC
RฮธJA
Junction-to-Case
Junction-to-Ambient
Diode Characteristics
Typ.
โโโ
โโโ
Max.
2.1
65
Units
ยฐC/W
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ยย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
โโโ โโโ 6.6
A showing the
integral reverse
G
โโโ โโโ 44
p-n junction diode.
S
โโโ โโโ 1.5
โโโ 510 770
โโโ 3.4 5.1
V TJ = 25ยฐC, IS = 11A, VGS = 0V ย
ns TJ = 25ยฐC, IF = 11A
ยตC di/dt = 100A/ยตs ยย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com