IRF3708 Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRF3708

HEXFET® Power MOSFET

International Rectifier 

IRF3708/3708S/3708L

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

30 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient –––

–––

RDS(on)

Static Drain-to-Source On-Resistance –––

–––

0.028

8

9.5

14.5

–––

12.0

13.5

29

V/°C

mΩ

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 15A ƒ

VGS = 4.5V, ID = 12A ƒ

VGS = 2.8V, ID = 7.5A ƒ

VGS(th)

Gate Threshold Voltage

0.6 ––– 2.0 V VDS = VGS, ID = 250µA

IDSS

Drain-to-Source Leakage Current

––– ––– 20 µA VDS = 24V, VGS = 0V

––– ––– 100

VDS = 24V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

–––

–––

200

nA

VGS = 12V

––– ––– -200

VGS = -12V

Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Qg

Qgs

Qgd

Qoss

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Forward Transconductance

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Output Gate Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

49 ––– –––

––– 24 –––

––– 6.7 –––

––– 5.8 –––

––– 14 21

––– 7.2 –––

––– 50 –––

––– 17.6 –––

––– 3.7 –––

––– 2417 –––

––– 707 –––

––– 52 –––

S VDS = 15V, ID = 50A

ID = 24.8A

nC VDS = 15V

VGS = 4.5V ƒ

VGS = 0V, ID = 24.8A, VDS = 15V

VDD = 15V

ns ID = 24.8A

RG = 0.6Ω

VGS = 4.5V ƒ

VGS = 0V

VDS = 15V

pF ƒ = 1.0MHz

Avalanche Characteristics

Symbol

EAS

IAR

Parameter

Single Pulse Avalanche Energy‚

Avalanche Current

Typ.

–––

–––

Max.

213

62

Units

mJ

A

Diode Characteristics

Symbol

IS

ISM

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

2

Min.

–––

–––

–––

–––

–––

–––

–––

–––

Typ.

–––

–––

0.88

0.80

41

64

43

70

Max.

62

248

1.3

–––

62

96

65

105

Units

A

V

ns

nC

ns

nC

Conditions

MOSFET symbol

D

showing the

integral reverse

G

p-n junction diode.

S

TJ = 25°C, IS = 31A, VGS = 0V ƒ

TJ = 125°C, IS = 31A, VGS = 0V ƒ

TJ = 25°C, IF = 31A, VR=20V

di/dt = 100A/µs ƒ

TJ = 125°C, IF = 31A, VR=20V

di/dt = 100A/µs ƒ

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