IRF9410
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.024 0.030
VGS = 10V, ID = 7.0A
––– 0.032 0.040 Ω VGS = 5.0V, ID = 4.0A
––– 0.037 0.050
VGS = 4.5V, ID = 3.5A
1.0 ––– ––– V VDS = VGS, ID = 250µA
––– 14 –––
––– ––– 2.0
––– ––– 25
S VDS = 15V, ID = 7.0A
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
––– 18 27
––– 2.4 3.6
––– 4.9 7.4
ID = 2.0A
nC VDS = 15V
VGS = 10V, See Fig. 10
––– 7.3 15
VDD = 25V
––– 8.3 17
––– 23 46
––– 17 34
ns ID = 1.0A
RG = 6.0Ω, VGS = 10V
RD = 25Ω
––– 550 –––
VGS = 0V
––– 260 ––– pF VDS = 25V
––– 100 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.8
showing the
A integral reverse
G
––– ––– 37
p-n junction diode.
S
––– 0.78 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V
––– 40 80 ns TJ = 25°C, IF = 2.0A
––– 63 130 nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 6.6mH
RG = 25Ω, IAS = 4.6A.
Surface mounted on FR-4 board, t ≤ 10sec.
ISD ≤ 4.6A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.