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IRF7413ATR Ver la hoja de datos (PDF) - International Rectifier

Número de pieza
componentes Descripción
Fabricante
IRF7413ATR
IR
International Rectifier IR
IRF7413ATR Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
IRF7413A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.034 ––– V/°C Reference to 25°C, ID = 1mA…
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.0135
––– ––– 0.020 Ω
VGS = 10V, ID = 6.6A „
VGS = 4.5V, ID = 3.3A „
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
10 ––– ––– S VDS = 10V, ID = 3.7A…
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0
––– ––– 25
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100 nA VGS = -20V
––– ––– 100
VGS = 20V
Qg
Total Gate Charge
––– 52 79
ID = 7.3A
Qgs
Gate-to-Source Charge
––– 6.1 9.2 nC VDS = 24V
Qgd
Gate-to-Drain ("Miller") Charge
––– 16 23
VGS = 10 V, See Fig. 6 and 9 „…
td(on)
Turn-On Delay Time
––– 8.6 –––
VDD = 15V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 50 ––– ns ID = 7.3A
––– 52 –––
RG = 6.2Ω
tf
Fall Time
––– 46 –––
RD = 2.0Ω, See Fig. 10 „…
Ciss
Input Capacitance
––– 1800 –––
VGS = 0V
Coss
Output Capacitance
––– 680 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 240 –––
Æ’ = 1.0MHz, See Fig. 5Â…
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
––– ––– 3.1
––– ––– 58
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
D
G
S
––– ––– 1.0 V TJ = 25°C, IS = 6.6A, VGS = 0V ƒ
––– 74 110 ns TJ = 25°C, IF = 7.3A
––– 200 300 nC di/dt = 100A/µs ƒ…
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L =9.8mH
RG = 25Ω, IAS =7.3A. (See Figure 12)
ƒ ISD ≤ 7.3A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Â… Use IRF7413 data and test conditions
† Surface mounted on FR-4 board, t ≤ 10sec.

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