IRF3711S Ver la hoja de datos (PDF) - International Rectifier
Nรบmero de pieza
componentes Descripciรณn
Fabricante
IRF3711S Datasheet PDF : 11 Pages
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IRF3711/3711S/3711L
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
20
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient โโโ
RDS(on)
โโโ
Static Drain-to-Source On-Resistance โโโ
VGS(th)
Gate Threshold Voltage
1.0
โโโ
IDSS
Drain-to-Source Leakage Current
โโโ
IGSS
Gate-to-Source Forward Leakage
โโโ
Gate-to-Source Reverse Leakage
โโโ
โโโ โโโ
0.022 โโโ
4.7 6.0
6.2 8.5
โโโ 3.0
โโโ 20
โโโ 100
โโโ 200
โโโ -200
V VGS = 0V, ID = 250ยตA
V/ยฐC Reference to 25ยฐC, ID = 1mA
mโฆ VGS = 10V, ID = 15A
VGS = 4.5V, ID = 12A
V VDS = VGS, ID = 250ยตA
ยตA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125ยฐC
nA VGS = 16V
VGS = -16V
Dynamic @ TJ = 25ยฐC (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
53 โโโ โโโ
Qg
Total Gate Charge
โโโ 29 44
Qgs
Gate-to-Source Charge
โโโ 7.3 โโโ
Qgd
Gate-to-Drain ("Miller") Charge
โโโ 8.9 โโโ
Qoss
Output Gate Charge
โโโ 33 โโโ
td(on)
Turn-On Delay Time
โโโ 12 โโโ
tr
Rise Time
โโโ 220 โโโ
td(off)
Turn-Off Delay Time
โโโ 17 โโโ
tf
Fall Time
โโโ 12 โโโ
Ciss
Input Capacitance
โโโ 2980 โโโ
Coss
Output Capacitance
โโโ 1770 โโโ
Crss
Reverse Transfer Capacitance
โโโ 280 โโโ
Units
S
nC
ns
pF
Conditions
VDS = 16V, ID = 30A
ID = 15A
VDS = 10V
VGS = 4.5V
VGS = 0V, VDS = 10V
VDD = 10V
ID = 30A
RG = 1.8โฆ
VGS = 4.5V
VGS = 0V
VDS = 10V
ฦ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
โโโ
โโโ
Max.
460
30
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Min.
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
Typ.
โโโ
โโโ
0.88
0.82
50
61
48
65
Max.
110
440
1.3
โโโ
75
92
72
98
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25ยฐC, IS = 30A, VGS = 0V
TJ = 125ยฐC, IS = 30A, VGS = 0V
TJ = 25ยฐC, IF = 16A, VR=10V
di/dt = 100A/ยตs
TJ = 125ยฐC, IF = 16A, VR=10V
di/dt = 100A/ยตs
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