IRF7464
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200
โโโ
โโโ
3.0
โโโ
โโโ
โโโ
โโโ
โโโ
0.23
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
โโโ
0.73
5.5
25
250
100
-100
V
V/ยฐC
โฆ
V
ยตA
nA
VGS = 0V, ID = 250ยตA
Reference to 25ยฐC, ID = 1mA ย
VGS = 10V, ID = 0.72A ย
VDS = VGS, ID = 250ยตA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125ยฐC
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
1.1 โโโ โโโ
โโโ 9.5 14
โโโ 2.5 3.8
โโโ 4.6 6.9
โโโ 11 โโโ
โโโ 9.5 โโโ
โโโ 18 โโโ
โโโ 15 โโโ
โโโ 280 โโโ
โโโ 52 โโโ
โโโ 14 โโโ
โโโ 330 โโโ
โโโ 25 โโโ
โโโ 48 โโโ
S VDS = 50V, ID = 0.72A
ID = 0.72A
nC VDS = 160V
VGS = 10V, ย
VDD = 100V
ns ID = 0.72A
RG = 24โฆ
VGS = 10V ย
VGS = 0V
VDS = 25V
pF ฦ = 1.0MHz
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
VGS = 0V, VDS = 160V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 160V ย
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energyย
IAR
Avalanche Currentย
EAR
Repetitive Avalanche Energyย
Typ.
โโโ
โโโ
โโโ
Max.
68
1.2
0.25
Units
mJ
A
mJ
Thermal Resistance
Parameter
RฮธJA
Maximum Junction-to-Ambientย
Typ.
โโโ
Max.
50
Units
ยฐC/W
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
2
Min.
โโโ
โโโ
โโโ
โโโ
โโโ
Typ.
โโโ
โโโ
โโโ
60
130
Max.
2.3
10
1.3
90
200
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25ยฐC, IS = 0.72A, VGS = 0V ย
TJ = 25ยฐC, IF = 0.72A
di/dt = 100A/ยตs ย
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