IRFB31N20 Ver la hoja de datos (PDF) - International Rectifier
Nรบmero de pieza
componentes Descripciรณn
Fabricante
IRFB31N20 Datasheet PDF : 11 Pages
| |||
IRFB/IRFS/IRFSL31N20D
Static @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
โV(BR)DSS/โTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
200
โโโ
โโโ
3.0
โโโ
โโโ
โโโ
โโโ
โโโ โโโ
0.25 โโโ
โโโ 0.082
โโโ 5.5
โโโ 25
โโโ 250
โโโ 100
โโโ -100
V
V/ยฐC
โฆ
V
ยตA
nA
VGS = 0V, ID = 250ยตA
Reference to 25ยฐC, ID = 1mA
VGS = 10V, ID = 18A ย
VDS = VGS, ID = 250ยตA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150ยฐC
VGS = 30V
VGS = -30V
Dynamic @ TJ = 25ยฐC (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff. Effective Output Capacitance
Avalanche Characteristics
17 โโโ โโโ S VDS = 50V, ID = 18A
โโโ 70 110
ID = 18A
โโโ 18 27
โโโ 33 49
nC VDS = 160V
VGS = 10V, ย
โโโ 16 โโโ
VDD = 100V
โโโ 38 โโโ ns ID = 18A
โโโ 26 โโโ
RG = 2.5โฆ
โโโ 10 โโโ
RD = 5.4โฆ ย
โโโ 2370 โโโ
VGS = 0V
โโโ 390 โโโ
VDS = 25V
โโโ 78 โโโ pF ฦ = 1.0MHz
โโโ 2860 โโโ
VGS = 0V, VDS = 1.0V, ฦ = 1.0MHz
โโโ 150 โโโ
โโโ 170 โโโ
VGS = 0V, VDS = 160V, ฦ = 1.0MHz
VGS = 0V, VDS = 0V to 160V ย
Parameter
EAS
Single Pulse Avalanche Energyย
IAR
Avalanche Currentย
EAR
Repetitive Avalanche Energyย
Thermal Resistance
Typ.
โโโ
โโโ
โโโ
Max.
420
18
20
Units
mJ
A
mJ
Parameter
Typ.
Max.
Units
RฮธJC
Junction-to-Case
RฮธCS
Case-to-Sink, Flat, Greased Surface ย
RฮธJA
Junction-to-Ambientย
RฮธJA
Junction-to-Ambientย
Diode Characteristics
โโโ
0.50
โโโ
โโโ
0.75
โโโ
ยฐC/W
62
40
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ย
MOSFET symbol
D
โโโ โโโ 31
A showing the
integral reverse
G
โโโ โโโ 124
p-n junction diode.
S
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
โโโ โโโ 1.3 V TJ = 25ยฐC, IS = 18A, VGS = 0V ย
โโโ 200 300 ns TJ = 25ยฐC, IF = 18A
โโโ 1.7 2.6 ยตC di/dt = 100A/ยตs ย
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
Share Link: 