IRFS33N15D Ver la hoja de datos (PDF) - International Rectifier

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Fabricante

IRFS33N15D

HEXFET® Power MOSFET

International Rectifier 

IRFB/IRFS/IRFSL33N15D

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

IDSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

IGSS

Gate-to-Source Reverse Leakage

150

–––

–––

3.0

–––

–––

–––

–––

––– ––– V

0.18 ––– V/°C

––– 0.056 Ω

––– 5.5 V

––– 25 µA

––– 250

––– 100

nA

––– -100

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA †

VGS = 10V, ID = 20A „

VDS = VGS, ID = 250µA

VDS = 150V, VGS = 0V

VDS = 120V, VGS = 0V, TJ = 150°C

VGS = 30V

VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

gfs

Forward Transconductance

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Coss

Output Capacitance

Coss

Output Capacitance

Coss eff. Effective Output Capacitance

Avalanche Characteristics

14 ––– –––

––– 60 90

––– 17 26

––– 27 41

––– 13 –––

––– 38 –––

––– 23 –––

––– 21 –––

––– 2020 –––

––– 400 –––

––– 91 –––

––– 2440 –––

––– 180 –––

––– 320 –––

S VDS = 50V, ID = 20A

ID = 20A

nC VDS = 120V

VGS = 10V, „†

VDD = 75V

ns ID = 20A

RG = 3.6Ω

VGS = 10VΩ „

VGS = 0V

VDS = 25V

pF ƒ = 1.0MHz†

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

VGS = 0V, VDS = 120V, ƒ = 1.0MHz

VGS = 0V, VDS = 0V to 120V …

Parameter

EAS

Single Pulse Avalanche Energy‚†

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

Thermal Resistance

Typ.

–––

–––

–––

Max.

330

20

17

Units

mJ

A

mJ

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

RθCS

Case-to-Sink, Flat, Greased Surface †

RθJA

Junction-to-Ambient†

RθJA

Junction-to-Ambient‡

Diode Characteristics

–––

0.50

–––

–––

0.90

–––

°C/W

62

40

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) †

MOSFET symbol

D

––– ––– 33

A showing the

––– ––– 130

integral reverse

G

p-n junction diode.

S

VSD

Diode Forward Voltage

––– ––– 1.3 V TJ = 25°C, IS = 20A, VGS = 0V „

trr

Reverse Recovery Time

––– 150 ––– ns TJ = 25°C, IF = 20A

Qrr

Reverse RecoveryCharge

––– 920 ––– nC di/dt = 100A/µs „

ton

Forward Turn-On Time

2

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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