IRF520 Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Fabricante

IRF520

HEXFET® Power MOSFET

International Rectifier 

IRF520N

VDS

RG

10 V

tp

L

D.U.T.

IAS

0.01Ω

+

- VDD

Fig 12a. Unclamped Inductive Test Circuit

V(BR)DSS

tp

VDD

VDS

IAS

Fig 12b. Unclamped Inductive Waveforms

QG

10 V

QGS

QGD

VG

Charge

Fig 13a. Basic Gate Charge Waveform

200

ID

TOP

2 .3 A

4.0A

160

BOTTOM 5.7A

120

80

40

0 VDD = 25V

25

50

75

A

100

125

150

175

Starting TJ , Junction Tem perature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Same Type as D.U.T.

50KΩ

12V

.2µF

.3µF

+

D.U.T. -VDS

VGS

3mA

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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