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Fabricante

IRFB59N10D

HEXFET® Power MOSFET

International Rectifier 

IRFB/IRFS/IRFSL59N10D

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

IDSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

IGSS

Gate-to-Source Reverse Leakage

100

–––

–––

3.0

–––

–––

–––

–––

––– ––– V

0.11 ––– V/°C

––– 0.025 Ω

––– 5.5 V

––– 25 µA

––– 250

––– 100

nA

––– -100

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 35.4A „

VDS = VGS, ID = 250µA

VDS = 100V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 150°C

VGS = 30V

VGS = -30V

Dynamic @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

gfs

Forward Transconductance

Qg

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain ("Miller") Charge

td(on)

Turn-On Delay Time

tr

Rise Time

td(off)

Turn-Off Delay Time

tf

Fall Time

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Coss

Output Capacitance

Coss

Output Capacitance

Coss eff. Effective Output Capacitance

Avalanche Characteristics

18 ––– ––– S VDS = 50V, ID = 35.4A

––– 76 114

ID = 35.4A

––– 24 36 nC VDS = 80V

––– 36 54

VGS = 10V, „

––– 16 –––

VDD = 50V

––– 90 ––– ns ID = 35.4A

––– 20 –––

RG = 2.5Ω

––– 12 –––

VGS = 10V „

––– 2450 –––

VGS = 0V

––– 740 –––

VDS = 25V

––– 190 ––– pF ƒ = 1.0MHz†

––– 3370 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

––– 390 –––

VGS = 0V, VDS = 80V, ƒ = 1.0MHz

––– 690 –––

VGS = 0V, VDS = 0V to 80V …

Parameter

Typ.

Max.

Units

EAS

Single Pulse Avalanche Energy‚

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

Thermal Resistance

–––

510

mJ

–––

35.4

A

–––

20

mJ

Parameter

Typ.

Max.

Units

RθJC

Junction-to-Case

RθCS

Case-to-Sink, Flat, Greased Surface †

RθJA

Junction-to-Ambient†

RθJA

Junction-to-Ambient‡

Diode Characteristics

–––

0.75

0.50

–––

°C/W

–––

62

–––

40

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

MOSFET symbol

D

––– ––– 59

A showing the

––– ––– 236

integral reverse

G

p-n junction diode.

S

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

ton

Forward Turn-On Time

2

––– ––– 1.3 V TJ = 25°C, IS = 35.4A, VGS = 0V „

––– 130 200 ns TJ = 25°C, IF = 35.4A

––– 0.75 1.1 µC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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