ILH100 Ver la hoja de datos (PDF) - Infineon Technologies
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ILH100 Datasheet PDF : 7 Pages
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ILH100
Hermetic Phototransistor
Optocoupler
FEATURES
• Operating Temperature Range,
–55°C to +125°C
• Current Transfer Ratio Guaranteed from
–55°C to +100°C Ambient Temperature Range
• High Current Transfer Ratio at Low Input Current
• Isolation Test Voltage, 3000 VDC
• Base Lead Available for Transistor Biasing
• Standard 8 Pin DIP Package
DESCRIPTION
The ILH100 is designed especially for hi-rel applica-
tions requiring optical isolation with high current trans-
fer ratio and low saturation VCE. Each optocoupler
consists of a light emitting diode and a NPN silicon
phototransistor mounted and coupled in an 8 pin her-
metically sealed DIP package. The ILH100's low input
current makes it well suited for direct CMOS to LSTTL/
TTL interfaces.
Dimensions in inches (mm)
.390±.005
(9.91±.13)
87 6 5
Siemens
XXX XXXX
XXYY
.320
(8.13)
max.
.300
(7.62)
typ.
.020 1 2
3
4 .150
(3.81)
(.51)
max.
min.
.010±.002
(.25±.05)
2
Anode
.018±.002
(.46±.05)
.100 ±.010
(2.54±.25)
.125
(3.18)
min.
Cathode 3
7
Base
6
Collector
5
Emitter
Maximum Ratings
Emitter
Reverse Voltage................................................................................ 6.0 V
Forward Current.............................................................................. 60 mA
Peak Forward Current(1) .................................................................. 1.0 A
Power Dissipation ........................................................................ 150 mW
Derate Linearly from 25°C ....................................................... 1.5 mW/°C
Detector
Collector–Emitter Voltage .................................................................. 70 V
Emitter–Base Voltage........................................................................ 7.0 V
Collector–Base Voltage .................................................................... 70 V
Continuous Collector Current ......................................................... 50 mA
Power Dissipation ........................................................................ 300 mW
Derate Linearly from 25°C ....................................................... 3.0 mW/°C
Package
Input–Output Isolation Test Voltage(2) .................................... 3000 VDC
Storage Temperature Range ......................................... –65°C to +150°C
Operating Temperature Range...................................... –55°C to +125°C
Junction Temperature ..................................................................... 150°C
Soldering Time at 240°C, 1.6 mm from case.................................10 sec.
Power Dissipation ........................................................................ 350 mW
Derate Linearly from 25°C ....................................................... 3.5 mW/°C
Notes:
1. Values applies for PW≤1.0 ms, PRR≤300 pps.
2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8
shorted together. TA=25°C and duration=1.0 second, RH=45%.
Infineon Technologies, Corp. • Optoelectronics Division • Cupertino, CA (formerly Siemens Microelectronics, Inc.)
www.infineon.com/opto • 1-800-777-4363
1
April 29, 1999
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