ZVN2106A Ver la hoja de datos (PDF) - Diodes Incorporated.

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ZVN2106A

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Diodes Incorporated. 

N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 60 Volt VDS

* RDS(on)=2Ω

ZVN2106A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at Tamb=25°C

Pulsed Drain Current

Gate Source Voltage

Power Dissipation at Tamb=25°C

Operating and Storage Temperature Range

SYMBOL

VDS

ID

IDM

VGS

Ptot

Tj:Tstg

D

G

S

E-Line

TO92 Compatible

VALUE

60

450

8

± 20

700

-55 to +150

UNIT

V

mA

A

V

mW

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

Voltage

BVDSS

60

V

ID=1mA, VGS=0V

Gate-Source Threshold

Voltage

VGS(th) 0.8 2.4 V

ID=1mA, VDS= VGS

Gate-Body Leakage

Zero Gate Voltage Drain

Current

IGSS

IDSS

20

nA VGS=± 20V, VDS=0V

500 nA VDS=60 V, VGS=0

100 µA VDS=48 V, VGS=0V,

T=125°C(2)

On-State Drain Current(1)

ID(on)

2

A

VDS=18V, VGS=10V

Static Drain-Source On-State RDS(on)

Resistance (1)

2

Ω

VGS=10V,ID=1A

Forward Transconductance

gfs

300

(1)(2)

mS VDS=18V,ID=1A

Input Capacitance (2)

Common Source Output

Capacitance (2)

Ciss

Coss

75 pF

45

pF VDS=18 V, VGS=0V, f=1MHz

Reverse Transfer Capacitance Crss

(2)

20 pF

3-361

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