BA3571F Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
BA3571F Datasheet PDF : 4 Pages
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BA3571F
!Electrical characteristics
_ (unless otherwise noted, Ta = 25°C, VCC = 3V, RL = 16Ω, and f = 1kHz; measurement circuit shown in Fig.1)
Parameter
Symbol
Quiescent current
Voltage gain 1
Voltage gain 2
Rated output power
Total harmonic distortion
IQ
GV1
GV2
POUT
THD
Channel balance
CB
Output noise voltage 1
VNO1
Output noise voltage 2
VNO2
Input resistance
RIN
Ripple rejection
RR
Boost
BB
Channel separation
CS
* Not designed for radiation resistance.
Min.
-
13.5
11.5
20
-
-1.5
-
-
10.8
23
4
52
Typ.
9
15
13
30
0.15
0
-92
-88
13.5
36
6
62
Max.
18
16.5
14.5
-
1.0
1.5
-88
-84
16.2
-
8
-
Unit
mA
dB
dB
mW
%
dB
dBm
dBm
kΩ
dB
dB
dB
Conditions
VIN = 0Vrms
BB = OFF
BB = ON
THD = 10%
VO = -16dBm
VO = -16dBm
BB = OFF, IHF - A
BB = ON, IHF - A
fRR = 100Hz, VRR= -30dBm, BB = OFF
f = 100Hz, VIN = -36dBm
f = 1kHz, BB = OFF
!Measurement circuit
~ 1µ +
10k 1
2
SW5
13k
SW3
33µ
+
12
+ 33µ
220µ
+
20
19 18 17 16
15 14
13 12
11
RF1
VCC
VCC
VCC
12
A
SW1
47
1
16
SW2 2
V~
THD
+
220µ
50k
Pre
GND
39k
BB SW
GND
THD
1
2
3
4
5
6
12
13k
+
2.2µ
SW4
100k
100k
SW3
5.1k
0.1µ
1
2
0.1µ
7
8
+
0.22µ
9
10
+
220µ
~V
~
16
12
GND
~
+
1
1µ
10k
2 SW6
Units
Resistors
: Ω (±1%)
Capacitors
: F (±1%)
Capacitors (electrolytic) : F (±5%)
Fig. 1
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