S1009 Ver la hoja de datos (PDF) - Diodes Incorporated.

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Fabricante

S1009

SM-8 COMPLEMENTARY CURRENT MIRROR

Diodes Incorporated. 

ZDS1009

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Maximum Operating Voltage

Maximum Voltage (E1-E2,E3-E4)

Peak Pulse Current

Continuous Current (E1-E4,E2-E3)

Total Power Dissipation at Tamb = 25°C*

Operating and Storage Temperature Range

Vy1-x1

VE-E’

IM

IC

Ptot

Tj:Tstg

120

V

10

V

4

A

1

A

2

W

-55 to +150

°C

* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper

equal to 2 inches square.

ELECTRICAL CHARACTERISTICS (at Tamb=25°C)

Parameter

Symbol

Min

Max

Unit

Conditions

Breakdown Voltage

Breakdown Voltage

Breakdown Voltage

Breakdown Voltage

Breakdown Voltage

Breakdown Voltage

Breakdown Voltage

Leakage

Leakage

Leakage

Leakage

Leakage

Leakage

Leakage

Input Voltage

Input Voltage

Input Voltage

Input Voltage

Transfer

Characteristic

Transfer

Characteristic

Output Zero-Offset

Voltage

BVY1-X1

BVX1-E1

BVY1-E3

BVE1-Y1

BVE2-Y1

BVE3-X1

BVE4-X1

IY1

IX1

IY1

IE1

IE2

IE3

IE4

VY1-E2

VY1-E3

VX1-E1

VX1-E4

VOUT

VOUT

VOFFSET

120

-30

30

-12

-6

12

6

-1.45

1.45

-1.45

1.45

0.99

1

V

V

V

V

V

V

V

50

nA

-10

µA

10

µA

-100

nA

-100

nA

100

nA

100

nA

-1.65

V

1.75

V

-1.75

V

1.65

V

1.01

V

mV

4

mV

IY1=100µA

IX1=-10mA

IY1=10mA

IE1=-100µA

IE2=-100µA

IE3=100µA

IE4=100uA

VY1-X1=100V

VX1-E1=-30V, Vy1=VE1

VY1-E3=30V,VX1=VE3

VE1-Y1=-8V

VE2-Y1=-4V

VE3-X1=8V

VE4-X1=4V

IY1=-1A

IY1=1A,VX1=VY1

IX1=-1A,VX1=VY1

IX1=1A

See Fig 1.VCC=5V

R1=R3=R4=100Ω, VIN=1V

See Fig 1.VCC=5V

R1=R3=R4=100Ω, VIN=5mV

See Fig 2.VCC=5V,R2<1Ω

R1=R3=R4=100Ω

ISSUE 2 - JANUARY 2000

2

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