Features
■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 32nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
WFU830
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
Junction and Storage Temperature
TL
Channel Temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
500
4.5
2.9
18
±30
300
7.5
4.5
48
0.38
-55~150
300
Thermal Characteristics
Symbol
Parameter
Min
RQJC
Thermal Resistance, Junction-to-Case
-
RQJA
Thermal Resistance, Junction-to-Ambient*
-
RQJA
Thermal Resistance, Junction-to-Ambient
-
*When mounted on the minimum pad size recommended(PCB Mount)
Value
Typ
-
-
-
Max
2.6
50
110
Rev.A Nov.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W