WFD2N60 Ver la hoja de datos (PDF) - Wisdom technologies
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WFD2N60 Datasheet PDF : 6 Pages
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HIGH VOLTAGE N-Channel MOSFET
Electrical Characteristics Tc=25℃ unless other wise noted
Symbol
Parameter
Test Condition Min. Typ.
Off Characteristics
BVDSS Drain-Sourse Breakdown Voltage ID=250μA，VGS=0
600
--
△BVDSS/ Breakdown Voltage Temperature ID=250μA,Reference
△TJ Conficient
to 25℃
--
0.4
Vds=600V, Vgs=0V
--
--
IDSS Zero Gate Voltage Drain Current Vds=480V, Tc=125℃
IGSSF Gate-body leakage Current,
Vgs=+30V, Vds=0V
--
--
Forward
IGSSR Gate-body leakage Current,
Vgs=-30V, Vds=0V
--
--
Reverse
On Characteristics
VGS(th)
RDS(on)
Date Threshold Voltage
Static Drain-Sourse
On-Resistance
Id=250uA,Vds=Vgs
Id=1.0A,Vgs=10V
2
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
--
270
VDS=25V，VGS=0，
Coss Output Capacitance
--
40
f=1.0MHz
Crss Reverse Transfer Capacitance
--
5
Switching Characteristics
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Sourse Charge
Gate-Drain Charge
--
10
VDD=300V，ID=2A， --
25
RG=25Ω (Note 3,4)
--
20
--
25
--
90
VDS=480,VGS=10V，
--
1.6
ID=2A (Note 3,4)
4.3
Drain-Sourse Diode Characteristics and Maximum Ratings
IS
ISM
VSD
trr
Qrr
*Notes
Maximun Continuous Drain-Sourse Diode Forward Current --
Maximun Plused Drain-Sourse DiodeForwad Current
--
Drain-Sourse Diode Forward
Id=2A
--
Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS=2A,VGS =0V
--
diF/dt=100A/μs (Note3)
--
1, L=55mH, IAS=2A, VDD=50V, RG=25Ω, Starting TJ =25°C
2, Repetitive Rating : Pulse width limited by maximum junction temperature
3, Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
4, Essentially Independent of Operating Temperature
--
--
--
180
0.72
Max
--
--
1
10
100
-100
4
5
350
50
7
30
60
50
60
11
--
--
2
8
1.5
--
--
Units
V
V/℃
μA
μA
nA
nA
V
Ω
pF
pF
pF
nS
nS
nS
nS
nC
nC
nC
A
A
V
nS
μC
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Rev.A0,August , 2010 |
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