WFD2N60 Ver la hoja de datos (PDF) - Wisdom technologies
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componentes Descripción
Fabricante
WFD2N60 Datasheet PDF : 6 Pages
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HIGH VOLTAGE N-Channel MOSFET
WFU2N60/WFD2N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge : 8.5 nC (Typ.)
□ BVDSS=600V,ID=2A
□ Lower RDS(on) : 5Ω (Max) @VG=10V
□ 100% Avalanche Tested
TO‐252
TO‐251
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy
(Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFU/D2N60
600
2
1.5
±30
120
2
44
-55 ~ +150
300
Thermal Characteristics
Symbol
Parameter
Typ
RθJC
Thermal Resistance,Junction to Case
--
RθCA
Thermal Resistance,Junction to Ambient*
--
RθJA
Thermal Resistance,Junction to Ambient
--
*When mounted on the minimum pad size recommended (PCB mounted)
Max
2.87
50
110
Units
V
A
A
V
mJ
A
W
℃
℃
Units
℃/W
℃/W
℃/W
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Rev.A0,August , 2010 |
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