VN2410LZL1G Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

VN2410LZL1G

Small Signal MOSFET

ON Semiconductor 

VN2410L

Small Signal MOSFET

240 V, 200 mA, N−Channel TO−92

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol Value Unit

Drain −Source Voltage

Drain −Gate Voltage

Gate −Source Voltage

− Continuous

− Non−repetitive (tp ≤ 50 μs)

Continuous Drain Current

Pulsed Drain Current

Power Dissipation @ TC = 25°C

Derate above 25°C

VDSS

VDGR

VGS

VGSM

ID

IDM

PD

240

Vdc

240

Vdc

± 20

Vdc

± 40

Vpk

200 mAdc

500 mAdc

350

mW

2.8 mW/°C

Operating and Storage Temperature

TJ, Tstg −55 to

°C

150

THERMAL CHARACTERISTICS

Characteristic

Symbol Max Unit

Thermal Resistance, Junction to Ambient

RθJA

312.5 °C/W

Maximum Lead Temperature for Soldering

TL

Purposes, 1/16 inch from case for 10

seconds

300

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

http://onsemi.com

200 mA, 240 V

RDS(on) = 10 Ω

N−Channel

D

G

S

123

STRAIGHT LEAD

BULK PACK

1

2

3

BENT LEAD

TAPE & REEL

AMMO PACK

TO−92

CASE 29

STYLE 22

MARKING DIAGRAM

& PIN ASSIGNMENT

VN2

410L

AYWW

1

Source

3

Drain

2

Gate

A = Assembly Location

Y = Year

WW = Work Week

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

© Semiconductor Components Industries, LLC, 2009

1

January, 2009 − Rev. 5

Publication Order Number:

VN2410L/D

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