VN10KLS Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
VN10KLS Datasheet PDF : 4 Pages
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VN0610L, VN10KLS, VN2222L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Threshold Region
10
Capacitance
100
VGS = 0 V
f = 1 MHz
80
1
TJ = 150_C
100_C
0_C
0.1 25_C
–55_C
0.01
0 0.25 0.5 0.75 1.0 1.25 1.5 1.75
VGS – Gate-to-Source Voltage (V)
60
Ciss
40
Coss
20
Crss
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Gate Charge
15.0
ID = 0.5 A
12.5
10.0
VDS = 30 V
Load Condition Effects on Switching
100
VDD = 15 V
RL = 25 W
VGS = 0 to 10 V
7.5
10
5.0
48 V
2.5
0
0
100 200 300 400 500 600
Qg – Total Gate Charge (pC)
1
0.1
0.5
ID – Drain Current (A)
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
td(off)
tf
td(on)
tr
1.0
0.2
0.1
0.1 0.05
0.02
0.01
0.1
0.01
Single Pulse
1
www.vishay.com
11-4
10
100
t1 – Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
1K
10 K
Document Number: 70213
S-04279—Rev. F, 16-Jul-01
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