VN10KLS Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
VN10KLS Datasheet PDF : 4 Pages
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VN0610L, VN10KLS, VN2222L
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
50
VGS = 2.0 V
40
1.9 V
Output Characteristics for Low Gate Drive
1.0
6V
5V
0.8
VGS = 10 V
30
1.8 V
0.6
4V
20
1.6 V
1.5 V
10
1.4 V
1.2 V
0
0
0.4
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
0.5
VDS = 15 V
0.4
TJ = –55_C
25_C
0.3
125_C
0.2
0.1
0.4
3V
0.2
2V
0
0
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
7
6
5
4
250 mA
3
ID = 50 mA
2
500 mA
1
0
0
1
2
3
4
5
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
5
4
VGS = 10 V
3
2
1
0
0
4
8
12
16
20
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
2.25
VGS = 10 V
2.00
1.75
1.50
ID = 0.5 A
0.1 A
1.25
1.00
0.75
0
0
0.2
0.4
0.6
0.8
1.0
ID – Drain Current (A)
0.50
–50 –10
30
70
110
150
TJ – Junction Temperature (_C)
Document Number: 70213
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-3
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