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UR5596(2005) Ver la hoja de datos (PDF) - Unisonic Technologies

Número de pieza
componentes Descripción
Fabricante
UR5596
(Rev.:2005)
UTC
Unisonic Technologies UTC
UR5596 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
UR5596
MOS IC
FOR DDR-II APPLICATIONS
As a result of the separate VDDQ pin and an internal resistor divider, UR5596 can be utilized in DDR-II system,
figure 5 and 6 show two recommended circuits in DDR-II SDRAM application. The output stage is connected to the
1.8V rail and the AVIN pin can be connected to either a 3.3V or 5V rail. If it is not desirable to use the 1.8V rail it is
possible to connect the output stage to a 3.3V rail. The power dissipation increasing concern must be careful as well
SSTL-II application. The advantage of configuration of figure 6 is that it has the ability to source and sink a higher
maximum continuous current.
SHDN
VDDQ=1.8V
AVIN=2.2V 5.5V
PVIN=1.8V
+
CIN
UTC UR5596
SHDN
VDDQ
AVIN
VREF
VSENSE
PVIN
VTT
GND
+
CREF
VREF=0.9V
+
COUT
VTT=0.9V
Figure 5. Recommended DDR-II Termination
SHDN
VDDQ=1.8V
AVIN=3.3V or 5.5V
PVIN=3.3V
+
CIN
UTC UR5596
SHDN
VDDQ
AVIN
VREF
VSENSE
PVIN
VTT
GND
+
CREF
VREF=0.9V
+
COUT
VTT=0.9V
Figure 6. DDR-II Termination with higher voltage rails
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
8
QW-R502-045,A

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