UR5596(2005) Ver la hoja de datos (PDF) - Unisonic Technologies
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UR5596 Datasheet PDF : 11 Pages
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UR5596
MOS IC
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
Junction Temperature
Operation Temperature(Note 2)
Storage Temperature
Thermal Resistance Junction-Ambient
PVIN, AVIN, VDDQ to GND
AVIN to GND(Note 1)
VDD
VDD
TJ
TOPR
TSTG
θJA
-0.3 ~ +6
2.2 ~ 5.5
125
-20 ~ +85
-40 ~ +150
150
V
V
℃
℃
℃
℃/W
Note: 1.Signified recommend operating range that indicates conditions for which the device is intended to be
functional, but does not guarantee specific performance limits.
2.The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~+85℃.
3.Absolute maximum ratings indicate limits beyond which damage to the device may occur.
ELECTRICAL CHARACTERISTICS
(TJ=25°C, VIN=AVIN=PVIN=2.5V, VDDQ=2.5V, unless otherwise specified).
PARAMETER
SYMBOL TEST CONDITIONS
VREF Voltage
VREF
VIN = VDDQ = 2.3V
VIN = VDDQ = 2.5V
VIN = VDDQ = 2.7V
VTT Output Voltage
IOUT = 0A
IOUT = ±1.5A
VIN = VDDQ = 2.3V
VIN = VDDQ = 2.5V
VTT
VIN = VDDQ = 2.7V
VIN = VDDQ = 2.3V
VIN = VDDQ = 2.5V
VIN = VDDQ = 2.7V
Minimum Shutdown Level
High
VIH
Low
VIL
VTT Output Voltage Offset (VREF - VTT)
VosTT
VTT
IOUT = 0A
IOUT = -1.5A
IOUT = +1.5A
Quiescent Current
IQ
IOUT = 0A
Quiescent Current in Shutdown
ISD SD = 0V
Shutdown Leakage Current
IQ_SD SD = 0V
VTT Leakage Current in Shutdown
SD = 0V
IV
VTT = 1.25V
VSENSE Input Current
ISENSE
VREF Output Impedance
ZVREF IREF = -30 ~ +30 µA
VDDQ Input Impedance
ZVDDQ
Thermal Shutdown
TSD
Thermal Shutdown Hysteresis
TSD-HYS
MIN
1.135
1.235
1.335
1.125
1.225
1.325
1.125
1.225
1.325
1.9
-20
-25
-25
TYP
1.158
1.258
1.358
1.159
1.259
1.359
1.159
1.259
1.359
0
0
0
320
115
2
1
13
2.5
100
165
10
MAX
1.185
1.285
1.385
1.190
1.290
1.390
1.190
1.290
1.390
0.8
20
25
25
500
150
5
10
UNIT
V
V
V
mV
µA
µA
µA
µA
nA
kΩ
kΩ
℃
℃
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R502-045,A
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