UPG110P(1989) Ver la hoja de datos (PDF) - NEC => Renesas Technology
Número de pieza
componentes Descripción
Fabricante
UPG110P Datasheet PDF : 8 Pages
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µPG110P
RECOMMENDED CHIP ASSEMBLY CONDITIONS
Die Attachment
Atmosphere : N2 gas
Temperature : 320 ± 5 °C
AuSn Preform : 0.5 × 0.5 × 0.05t (mm), 1 pce.
* The hard solder such as AuSi or AuGe which has higher melting point than AuSn should not
be used.
Base Material : CuW, Cu, KV
* Other material should not be used.
Epoxy Die Attach is not recommended.
Bonding
Machine
: TCB
* USB is not recommended
Wire
: 30 µm diameter Au wire
Temperature : 260 ± 5 °C
Strength
: 31 ± 3 g
Atmosphere : N2 gas
Chip Bonding Diagram
VDD
50 to
100 µm
200 to 500 µm
less than 300 µ m
5
VDD
GND
500 to
1 000 µm
IN
OUT
200 to
500 µm
GND
1
2
GND
GND
3
GND 4
not used
less than 200 µm
5
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